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SSF8521
DESCRIPTION
The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
Schematic diagram
GENERAL FEATURES
MOSFET VDS = -20V,ID = -4.4A RDS(ON) < 170m @ VGS=-1.8V RDS(ON) < 110m @ VGS=-2.5V RDS(ON) < 80m @ VGS=-4.5V
SCHOTTKY
VR = 20V, IF = 4.1A, VF<0.575V @ 1.0A High Power and current handing capability Lead free product is acquired Surface Mount Package
Marking and pin Assignment
Application
DC-DC conversion applications Load switch Power management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
8521
Device
SSF8521
Device Package
DFN3X2-8L
Reel Size
Tape width
Quantity
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Schottky reverse voltage Continuous Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM
VR IF
MOSFET
-20 8 -4.4 -13
Schottky
Unit
V V A A
20 4.1 2.1 -55 To 150 -55 To 150
V A W
PD TJ,TSTG
THERMAL CHARACTERISTICS
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 1 of 5
A Good-Ark Company
SSF8521
MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) RJA 100 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250A VGS=-4.5V, ID=-3.2A Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V, ID=-2.2A VGS=-1.8V, ID=-1.0A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge VSD Trr Qrr VGS=0V,IS=-2.5A VGS = 0 V, IS = -1.0 A , dIS/dt = 100 A/us td(on) tr td(off) tf Qg Qgs Qgd VDS=-10V,ID=-3.2A,VGS=-4.5V VDD=-10V,ID=-3.2A VGS=-4.5V,RGEN=2.4 Clss Coss Crss VDS=-10V,VGS=0V, F=1.0MHz gFS VDS=-10V,ID=-2.9A BVDSS IDSS IGSS VGS=0V ID=-250A VDS=-16V,VGS=0V VGS=8V,VDS=0V
Min
Typ
Max
Unit
-20 -1 100
V A nA
-0.45 64 85 120 8
-1.2 80 110 170
V
m
S
680 100 70
PF PF PF
5.8 11.7 16 12.4 7.4 1.4 2.5
nS nS nS nS nC nC nC
-0.8 13.5 6.5
-1.2
V nS nC
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
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SSF8521
SCHOTTKY DIODE PARAMETERS Forward Voltage Drop Maximum reverse leakage current VF Irm IF=1.0A VR=20V 0.51 0.575 5 V uA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
td(on) ton tr
90%
td(off)
toff tf
90%
Vin Vgs Rgen G
Rl D Vout
VOUT
10%
INVERTED
10% 90%
S
VIN
10%
50%
50%
PULSE WIDTH
Figure1:Switching Test Circuit
Figure 2:Switching Waveforms
ZJA Normalized Transient Thermal Resistance
Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 3 of 5
A Good-Ark Company
SSF8521
DFN3X2-8L PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
COMMON DIMENSIONS(MM) PKG. REF. A A1 A3 D E b L D2 E2 e NOTES
1. All dimensions are in millimeters. 2. Tolerance 0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac
W:VERY VERY THIN MIN. 0.70 0.00 2.95 1.95 0.25 0.28 0.77 0.20 NOM. 0.75 -- 0.2 REF. 3.00 2.00 0.30 0.35 0.92 0.30 0.65 BCS. 3.05 2.05 0.35 0.43 1.02 0.40 MAX. 0.80 0.05
(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 4 of 5
A Good-Ark Company
SSF8521
ATTENTION:
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.

(c)Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 5 of 5
A Good-Ark Company

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